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MJE180Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE180

Bipolar (BJT) Transistor NPN 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Manufacturer

Central Semiconductor Corp


Manufacturer Product Number

MJE180


Brief Description

TRANS NPN 40V 3A TO126

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MJE180 Product Specification

CategoryDiscrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors
MfrCentral Semiconductor Corp
Series-
PackageBulk
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max1.5 W
Frequency - Transition50MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Base Product NumberMJE180