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KSC900 Product Specification
| Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors |
|---|---|
| Mfr | onsemi |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500µA, 3V |
| Power - Max | 250 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | KSC900 |